Fabrication of an isolated dummy fin between active vertical fins with tight fin pitch

ABSTRACT

A method of forming an arrangement of active and inactive fins on a substrate, including forming at least three vertical fins on the substrate, forming a protective liner on at least three of the at least three vertical fins, removing at least a portion of the protective liner on the one of the at least three of the at least three of vertical fins, and converting the one of the at least three of the at least three vertical fins to an inactive vertical fin.

BACKGROUND Technical Field

The present invention generally relates to formation of inactive dummyfins between active vertical fins, while maintaining a tight fin pitch,and more particularly to inactivating selected vertical fins byconversion to an insulating material (e.g., oxidation) between activefins without increasing fin pitch.

Description of the Related Art

A Field Effect Transistor (FET) typically has a source, a channel, and adrain, where current flows from the source to the drain, and a gate thatcontrols the flow of current through the channel. Field EffectTransistors (FETs) can have a variety of different structures, forexample, FETs have been fabricated with the source, channel, and drainformed in the substrate material itself, where the current flowshorizontally (i.e., in the plane of the substrate), and finFETs havebeen formed with the channel extending outward from the substrate, butwhere the current also flows horizontally from a source to a drain. Thechannel for the finFET can be an upright slab of thin rectangular Si,commonly referred to as the fin with a gate on the fin, as compared to aMOSFET with a single gate in the plane of the substrate. Depending onthe doping of the source and drain, an n-FET or a p-FET may be formed.

Examples of FETs can include a metal-oxide-semiconductor field effecttransistor (MOSFET) and an insulated-gate field-effect transistor(IGFET). Two FETs also may be coupled to form a complementary metaloxide semiconductor (CMOS), where a p-channel MOSFET and n-channelMOSFET are coupled together.

With ever decreasing device dimensions, forming the individualcomponents and electrical contacts become more difficult. An approach istherefore needed that retains the positive aspects of traditional FETstructures, while overcoming the scaling issues created by formingsmaller device components.

SUMMARY

In accordance with an embodiment of the present principles, a method isprovided for forming an arrangement of active and inactive fins on asubstrate. The method includes the step of forming at least threevertical fins on the substrate. The method further includes the steps offorming a protective liner on at least three of the at least threevertical fins, and removing at least a portion of the protective lineron one of the at least three of the at least three of vertical fins. Themethod further includes the step of converting the one of the at leastthree of the at least three vertical fins to an inactive vertical fin.

In accordance with an embodiment of the present principles, a method isprovided for forming an arrangement of active and inactive fins on asubstrate. The method includes the step of forming at least threevertical fins on the substrate. The method further includes the step offorming a protective liner on at least three of the at least threevertical fins. The method further includes the step of forming a fillerlayer on the at least three of the at least three vertical fins. Themethod further includes the step of forming a masking layer on at leasta portion of the filler layer, wherein at least a portion of theprotective liner on one of the at least three of the at least threevertical fins is exposed. The method further includes the steps ofremoving at least a portion of the protective liner on the one of the atleast three vertical fins, and converting the one of the at least threeof the at least three vertical fins to an inactive vertical fin.

In accordance with another embodiment of the present principles, anarrangement of active and inactive fins on a substrate is provided. Thearrangement of active and inactive fins includes a plurality of activevertical fins, wherein the active vertical fins are made of asemiconductor material. The arrangement further includes at least oneinactive vertical fin adjacent to at least one of the plurality ofactive vertical fins, wherein the at least one inactive vertical fin isat least partially made of an insulating material. The arrangementfurther includes a dielectric layer on at least a portion of theplurality of active vertical fins.

These and other features and advantages will become apparent from thefollowing detailed description of illustrative embodiments thereof,which is to be read in connection with the accompanying drawings.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

The disclosure will provide details in the following description ofpreferred embodiments with reference to the following figures wherein:

FIG. 1 is a cross-sectional side view of a fin template layer formed onthe surface of a substrate, a mandrel layer formed on the fin templatelayer, a mandrel template layer formed on the mandrel layer, and amandrel mask layer formed on the mandrel template layer, in accordancewith the present principles;

FIG. 2 is a cross-sectional side view of a mandrel mask segment andmandrel template on each of a plurality of sacrificial mandrels on a fintemplate layer, in accordance with the present principles;

FIG. 3 is a cross-sectional side view of spacers formed on each of thesidewalls of the sacrificial mandrels, in accordance with the presentprinciples;

FIG. 4 is a cross-sectional side view of a plurality of spacers on a fintemplate layer, in accordance with the present principles;

FIG. 5 is a cross-sectional side view of a spacer and fin template oneach of a plurality of vertical fins formed from the substrate, inaccordance with the present principles;

FIG. 6 is a cross-sectional side view of a plurality of vertical fins ona region of the substrate, in accordance with the present principles;

FIG. 7 is a cross-sectional side view of a protective liner on theplurality of vertical fins on the substrate, in accordance with thepresent principles;

FIG. 8 is a cross-sectional side view of a filler layer filling thespace between the vertical fins and a mask layer on the filler layer andfins, in accordance with the present principles;

FIG. 9 is a cross-sectional side view of a patterned masking layer thatexposes protective liners on one or more vertical fin(s), in accordancewith the present principles;

FIG. 10 is a cross-sectional side view of a partially removed protectiveliner on a plurality of vertical fins, in accordance with the presentprinciples;

FIG. 11 is a cross-sectional side view of a reduced height filler layerexposing vertical fins covered or not covered with the protective liner,in accordance with the present principles;

FIG. 12 is a cross-sectional side view of a plurality of vertical finscovered to inactive fins, in accordance with the present principles;

FIG. 13 is a cross-sectional side view of a gate dielectric layer formedon the active and inactive vertical fins, in accordance with the presentprinciples;

FIG. 14 is a cross-sectional side view of a dummy gate layer formed onthe active and inactive vertical fins, in accordance with the presentprinciples;

FIG. 15 is a cross-sectional side view of patterned dummy gates andexposed inactive vertical fins, in accordance with the presentprinciples;

FIG. 16 is a cross-sectional side view of dummy gates and an interlayerdielectric formed on portions of the gate dielectric layer, inaccordance with the present principles

FIG. 17 is a cross-sectional side view of a work function layer and aninterlayer dielectric formed on portions of the gate dielectric layerafter removal of the dummy gates, in accordance with the presentprinciples.

FIG. 18 is a cross-sectional side view of a work function layer and agate fill layer formed on portions of the gate dielectric layer, inaccordance with the present principles; and

FIG. 19 is a cross-sectional top view of an arrangement of adjacentactive vertical fins and inactive vertical fins having gate structuresthereon, in accordance with the present principles.

DETAILED DESCRIPTION

Principles and embodiments of the present disclosure relate generally toformation of inactive (i.e., dummy) fins between active fins withoututilizing a fin-cut process. Instead of physically removing one or morefins amidst an array of fins intended to form active devices,predetermined fins may be converted into inactive fins. The verticalfins may be converted into inactive vertical fins by an oxidationprocess, where the inactive fins physically remain in their positionwithin the fin array, but are no longer electrically functional (e.g.,conductive). Conversion of at least a portion of a semiconductorvertical fin to a non-conductive semiconductor-oxide vertical fin mayrender the converted vertical fin inactive (i.e., unable to function asa channel in a finFET). Due to conversion of a conductive vertical finto a non-conductive vertical fin, a current may not pass through thevertical fin horizontally (i.e., laterally) or vertically (i.e.,perpendicular to the substrate).

Principles and embodiments of the present disclosure also relategenerally to selectively converting one or more vertical fins on asubstrate from an active nature to an inactive nature by isolating thevertical fins and accessing preselected vertical fins for conversionfrom a semiconductor material to an insulating material. The verticalfin may be converted from a semiconductor material to an insulatingmaterial by a thermal reaction, for example, silicon (Si) orsilicon-germanium (SiGe) may be converted into a silicon oxide bythermal reaction with an oxide-forming gas.

Principles and embodiments of the present disclosure also relategenerally to an arrangement of active vertical fins and inactivevertical fins on a substrate, where the inactive vertical fin isseparated from the adjacent active vertical fins by the same fin pitchas each of the active vertical fins were originally separated from eachother in the arrangement. The arrangement may be a row of approximatelyparallel vertical fins on a region of a substrate. Forming an inactivevertical fin in the arrangement may be an alternative to performing afin-cut process to physically remove an otherwise active vertical finfrom the arrangement on the substrate. The present principles andembodiments may also be an alternative to changing (e.g., increasing)the pitch between the vertical fins to compensate for critical dimensionlimitations of lithographic processes and lithographic mask alignment,for example, that may be used for a fin cut process.

Exemplary applications/uses to which the present principles can beapplied include, but are not limited to: formation of complementarymetal oxide silicon (CMOS) field effect transistors (FETs) formed bycoupled finFETs, and digital gate devices (e.g., NAND, NOR, XOR, etc.).

In various embodiments, the materials and layers may be deposited byphysical vapor deposition (PVD), chemical vapor deposition (CVD), atomiclayer deposition (ALD), molecular beam epitaxy (MBE), or any of thevarious modifications thereof, for example, plasma-enhanced chemicalvapor deposition (PECVD), metal-organic chemical vapor deposition(MOCVD), low pressure chemical vapor deposition (LPCVD), electron-beamphysical vapor deposition (EB-PVD), and plasma-enhanced atomic layerdeposition (PEALD). The depositions may be epitaxial processes, and thedeposited material may be crystalline. In various embodiments, formationof a layer may be by one or more deposition processes, where, forexample, a conformal layer may be formed by a first process (e.g., ALD,PEALD, etc.) and a fill may be formed by a second process (e.g., CVD,electrodeposition, PVD, etc.).

It is to be understood that the present invention will be described interms of a given illustrative architecture; however, otherarchitectures, structures, substrate materials and process features andsteps may be varied within the scope of the present invention.

It should be noted that certain features may not be shown in all figuresfor the sake of clarity. This is not intended to be interpreted as alimitation of any particular embodiment, or illustration, or scope ofthe claims.

Referring now to the drawings in which like numerals represent the sameor similar elements and initially to FIG. 1, which is a cross-sectionalside view of a fin template layer formed on the surface of a substrate,a mandrel layer formed on the fin template layer, a mandrel templatelayer formed on the mandrel layer, and a mandrel mask layer formed onthe mandrel template layer, in accordance with the present principles.

In one or more embodiments, a substrate 110 may be a semiconductor or aninsulator with an active surface semiconductor layer. The substrate maybe crystalline, semi-crystalline, microcrystalline, or amorphous. Thesubstrate may be essentially (i.e., except for contaminants) a singleelement (e.g., silicon), primarily (i.e., with doping) of a singleelement, for example, silicon (Si) or germanium (Ge), or the substratemay include a compound, for example, Al₂O₃, SiO₂, GaAs, SiC, or SiGe.The substrate may also have multiple material layers, for example, asemiconductor-on-insulator substrate (SeOI), a silicon-on-insulatorsubstrate (SOI), germanium-on-insulator substrate (GeOI), orsilicon-germanium-on-insulator substrate (SGOI). The substrate may alsohave other layers forming the substrate, including high-k oxides and/ornitrides. In one or more embodiments, the substrate 110 may be a siliconwafer. In various embodiments, the substrate may be a single crystalsilicon (Si), silicon germanium (SiGe), or III-V semiconductor (e.g.,GaAs) wafer, or have a single crystal silicon (Si), silicon germanium(SiGe), or III-V semiconductor (e.g., GaAs) surface/active layer.

In one or more embodiments, a fin template layer 120 may be formed on atleast a portion of a surface of a substrate 110.

In various embodiments, a fin template layer 120 may be a hard masklayer for masking the substrate during transfer of a vertical finpattern to the substrate 110. The fin template layer 120 may be asilicon oxide (SiO), a silicon nitride (SiN), a silicon oxynitride(SiON), a silicon carbonitride (SiCN), a silicon boronitride (SiBN), asilicon borocarbide (SiBC), a silicon boro carbonitride (SiBCN), a boroncarbide (BC), a boron nitride (BN), a titanium nitride (TiN) orcombinations thereof, where the fin template layer 120 may include oneor more layers. The fin template layer 120 may also act as an etch-stoplayer for forming sacrificial mandrels from a mandrel layer.

In various embodiments, the fin template layer 120 may be formed on thesubstrate surface by CVD, PECVD, PVD, thermal growth, or combinationsthereof, where the fin template layer 120 may be blanket deposited onthe substrate.

In one or more embodiments, a mandrel layer 130 may be formed on atleast a portion of the fin template layer 120.

In various embodiments, mandrel layer 130 may be a sacrificial materialthat can be easily and selectively patterned and etched. The mandrellayer 130 may be amorphous silicon (a-Si), poly-silicon (p-Si),amorphous carbon (a-C), silicon-germanium (SiGe), or suitablecombinations thereof.

In one or more embodiments, the mandrel layer 130 may be formed by CVDor PECVD, where the mandrel layer 130 may be blanket deposited on thefin template layer 120.

In one or more embodiments, a mandrel template layer 140 may be formedon the mandrel layer 130, where the mandrel template layer may be a hardmask layer.

The mandrel template layer 140 may be a silicon oxide (SiO), a siliconnitride (SiN), a silicon oxynitride (SiON), a silicon carbonitride(SiCN), a silicon boronitride (SiBN), a silicon borocarbide (SiBC), asilicon boro carbonitride (SiBCN), a boron carbide (BC), a boron nitride(BN), a titanium nitride (TiN) or combinations thereof, where themandrel template layer 140 may include one or more layers.

In one or more embodiments, a mandrel mask layer 150 may be formed onthe mandrel template layer 140, where the mandrel mask layer 150 may bea hard mask layer or soft mask layer for masking the mandrel templatelayer 140.

In one or more embodiments, the mandrel mask layer 150 may be alithographic resist material (e.g., a photo resist material, an e-beamresist material, etc.).

In one or more embodiments, the mandrel mask layer 150 may be a positiveor negative resist material, for example, Poly(methyl methacrylate)(PMMA) or SU-8, or an electron-beam cured material, for example,hydrogen silsesquioxane (HSQ).

FIG. 2 is a cross-sectional side view of a mandrel mask segment andmandrel template on each of a plurality of sacrificial mandrels on a fintemplate layer, in accordance with the present principles.

In various embodiments, a plurality of vertical fins may be formed by asidewall image transfer (SIT) process, self-aligned double patterning(SADP), or self-aligned quadruple patterning (SAQP) to provide a tightpitch between vertical fins.

In one or more embodiments, the mandrel mask layer 150 may be patternedand developed to form one or more mandrel mask segments 151 on thesurface of the mandrel template layer 140, where portions of the mandrelmask layer 150 may be removed to expose underlying portions of themandrel mask layer. In various embodiments, the mandrel mask layer 150may be lithographically patterned and developed, as would be known inthe art.

In various embodiments, the one or more mandrel mask segments 151 mayform a mandrel pattern on the surface of the mandrel template layer 140,where the mandrel pattern may be transferred to the mandrel templatelayer 140 by removing the portions of the mandrel template layer exposedby forming the mandrel mask segments 151. The mandrel pattern may bedetermined by the resolution of the lithography techniques (e.g.,ultraviolet (UV), deep ultraviolet (DUV), e-beam, etc.) used to patternthe mandrel mask layer 150.

In one or more embodiments, the mandrel mask segments 151 may have awidth in the range of about 10 nm to about 30 nm, or in the range ofabout 12 nm to about 20 nm, where the mandrel width may define adistance between subsequently formed adjacent vertical fins.

In various embodiments, the pitch between adjacent mandrel mask segments151 may be in the range of about 20 nm to about 60 nm, or in the rangeof about 20 nm to about 40 nm, or in the range of about 25 nm to about30 nm, which may determine the pitch between vertical fins.

In one or more embodiments, the exposed portions of the mandrel templatelayer 140 may be removed by wet etching or by a dry plasma etch, wherethe dry plasma may be a directional reactive ion etch (RIE). Removal ofthe exposed portions of the mandrel template layer 140 may form one ormore mandrel templates 141 below the mandrel mask segments 151, andexpose underlying portions of the mandrel layer 130. The mandreltemplates 141 may be used to transfer the mandrel pattern to the mandrellayer 130.

In one or more embodiments, the exposed portions of the mandrel layer130 may be removed to form one or more sacrificial mandrels 131, wherethe exposed portions of the mandrel layer may be removed by a directiondry plasma etch, for example, a selective RIE. The one or moresacrificial mandrels 131 may be on the fin template layer 120, whereportions of the fin template layer are exposed between the sacrificialmandrel(s) 131.

FIG. 3 is a cross-sectional side view of spacers formed on each of thesidewalls of the sacrificial mandrels, in accordance with the presentprinciples.

In one or more embodiments, spacers 161 may be formed on each of the oneor more sacrificial mandrels 131, where the spacers 161 may be formed onthe sidewalls.

In one or more embodiments, the spacers 161 may be formed by forming aspacer layer on the one or more sacrificial mandrels 131, where thespacer layer may be blanket deposited on each of the mandrel templates141 on the sacrificial mandrels 131 and the exposed surfaces of the fintemplate layer 120. In various embodiments, the mandrel mask segments151 may be removed from the mandrel templates 141 before formation ofthe spacer layer.

In various embodiments, the spacer layer may be silicon oxide (SiO),silicon nitride (SiN), silicon oxynitride (SiON), or combinationsthereof.

In various embodiments, the spacer layer may be formed by ALD, PEALD,CVD, PECVD, PVD, or combinations thereof. In various embodiments, thespacer layer may be conformally deposited on the sacrificial mandrels,for example, by ALD or PEALD, to accurately control the thickness of thespacer layer on the sidewalls of the sacrificial mandrels 131.

In various embodiments, the spacer layer may have a thickness in therange of about 4 nm to about 20 nm, or in the range of about 6 nm toabout 15 nm, or in the range of about 8 nm to about 12 nm, where thethickness of the spacer layer may determine the pitch and/or width ofsubsequently formed vertical fins.

In one or more embodiments, a portion of the spacer layer on the topsurfaces of the mandrel templates 141 may be removed by achemical-mechanical polishing (CMP) to expose the mandrel templates 141.The portion of the spacer layer on the template layer 120 may be removedby an etch-back process using a directional etch, for example, RIE maybe used to remove the portion the spacer layer on surfaces approximatelyperpendicular to the incident ion beam, while the spacer layer on thevertical sidewalls of the sacrificial mandrels 131 remain essentiallyunetched.

FIG. 4 is a cross-sectional side view of a plurality of spacers on a fintemplate layer, in accordance with the present principles.

In one or more embodiments, the mandrel templates 141 and sacrificialmandrels 131 may be removed after the spacers are formed, where themandrel templates 141 and sacrificial mandrels 131 may be removed byselective etching. The mandrel templates 141 and sacrificial mandrels131 may be selectively removed, while the spacers 161 remain on the fintemplate layer 120 forming a fin pattern. The spacers 161 may be made ofa different material from the mandrel templates 141 and sacrificialmandrels 131, so the mandrel templates 141 and sacrificial mandrels 131may be selectively removed.

FIG. 5 is a cross-sectional side view of a spacer and fin template oneach of a plurality of vertical fins formed from the substrate, inaccordance with the present principles.

In one or more embodiments, the fin pattern formed by the spacers 161may be transferred to the fin template layer 120 by removing the exposedportion of the fin template layer 120. In various embodiments, a portionof the fin template layer 120 may be removed to form a fin template 121below each of the one or more spacers 161 by a direction RIE. Removal ofthe portions of the fin template layer 120 may expose portions of theunderlying substrate 110 between the spacer(s) 161 and fin template(s)121.

In one or more embodiments, the exposed portions of the substrate may beremoved to form one or more vertical fin(s) 111, where the substrate andone or more vertical fin(s) 111 may be made of a semiconductor material.In various embodiments, the trenches may be etched into the substrate110 between the spacer(s) 161 and fin template(s) 121 to leavefree-standing vertical fin(s) 111, where the substrate may be etched bya directional RIE. The removal of the substrate material may formvertical fin(s) 111 with a tapered profile having a greater width at thebase of the vertical fin(s) and a narrower width at the top of thefin(s), where the tapered profile may be produced as an aspect of theetching process. In various embodiments, the vertical fin(s) 111 mayhave a vertical profile with minimal or no tapering.

In non-limiting embodiments, the substrate 110 may be a single crystalsilicon wafer or a single crystal silicon-germanium wafer, or thesubstrate may include a single crystal silicon or single crystal silicongermanium active layer at the surface of the substrate 110 from which aplurality of vertical fins may be formed.

FIG. 6 is a cross-sectional side view of a plurality of vertical fins ona region of the substrate, in accordance with the present principles.

In one or more embodiments, the spacer(s) 161 and fin template(s) 121may be removed from the top surface of the one or more vertical fin(s)111. The spacer(s) 161 may be removed, for example, by an isotropic dryetch, a selective RIE process, or a selective wet etch. The underlyingfin template(s) 121 may act as an etch stop. The exposed fin template(s)121 may then be removed by a separate selective RIE or wet etch toexpose the underlying vertical fin(s) 111. In various embodiments, thefin template(s) 121 may remain on the vertical fin(s) 111 after thespacer(s) 161 are removed.

FIG. 7 is a cross-sectional side view of a protective liner on theplurality of fin templates and vertical fins on the substrate, inaccordance with the present principles.

In one or more embodiments, a protective liner 170 may be formed on thefin template(s) 121 and/or vertical fin(s) 111, where the protectiveliner 170 may cover the fin template(s) 121 and/or top surface,endwalls, and sidewalls of one or more vertical fin(s) 111. In variousembodiments, the protective liner 170 may be conformally deposited onthe fin template(s) 121 and/or vertical fin(s) 111, for example, by ALD,PEALD, CVD, PECVD, or a combination thereof. In various embodiments, theprotective liner 170 may be formed on the vertical fin(s) 111 byoxidizing or nitriding at least an outer layer of the material of thevertical fin(s) 111.

In one or more embodiments, the protective liner may be a silicon oxide(SiO), silicon nitride (SiN), silicon oxynitride (SiON), siliconboronitride (SiBN), or combinations thereof. In various embodiments, theprotective liner 170 may be Si₃N₄. In various embodiments, theprotective liner 170, fin template(s) 121, and vertical fin(s) 111 maybe different materials, such that the fin template(s) and/or protectiveliner may be selectively removed from the vertical fin(s) 111.

In a non-limiting exemplary embodiment, a SiO protective liner 170 maybe formed on one or more SiGe vertical fin(s) 111 by oxidizing thesilicon of the SiGe fin(s). In another non-limiting exemplaryembodiment, a Si₃N₄ protective liner 170 may be formed on one or more Sivertical fin(s) 111 by conformally depositing the Si₃N₄ protective layer170 on the one or more vertical fin(s) 111 by ALD or PEALD.

In one or more embodiments, the protective liner 170 may have athickness in the range of about 5 nm to about 10 nm.

FIG. 8 is a cross-sectional side view of a filler layer filling thespace between the vertical fins and a mask layer on the filler layer andfins, in accordance with the present principles.

In one or more embodiments, a filler layer 180 may be formed on theplurality of vertical fins 111, where the filler layer may be aninsulating dielectric material that fills at least the spaces betweenneighboring vertical fins 111. In various embodiments, the filler layer180 may be formed on at least a portion of the protective liner 170,where the filler layer may extend above the top surface(s) of theprotective liner 170. A chemical-mechanical polishing may be used toreduce the height of the filler layer 180 and provide a flat, uniformsurface.

In one or more embodiments, filler layer 180 may be silicon oxide (SiO),silicon nitride (SiN), silicon oxynitride (SiON), a low-k dielectric, ahigh-k dielectric, or a combination thereof, although other insulatingmaterials are also contemplated. The filler layer 180 may be a differentmaterial than the protective liner 170, so the protective liner 170 maybe selectively removed from between the vertical fins 111 and fillerlayer.

In one or more embodiments, a masking layer 190 may be formed on atleast portions of the top surface of the filler layer 180 and at leastportions of the top surfaces of the protective liner 170, where themasking layer may be an organic lithography material that can bepatterned and developed.

FIG. 9 is a cross-sectional side view of a patterned masking layer thatexposes protective liners on one or more vertical fin(s), in accordancewith the present principles.

In one or more embodiments, the masking layer 190 may be patterned anddeveloped to form openings that expose at least a portion of anunderlying protective liner 170 on a vertical fin 111, where thevertical fin 111 may be predetermined to be converted into inactivefins. In various embodiments, portions of the protective liner 170 on aplurality of vertical fin(s) 111 may be exposed to enable conversion ofa plurality of the vertical fins 111 into inactive fins. In variousembodiments, a portion of the filler layer 180 may be exposed when themasking layer 190 is developed, where the opening(s) do not directlyline up with the edges of the top surface of the protective liner, suchthat a portion of masking layer 190 may overlap with the top surface ofthe protective liner 170. The protective liner 170 may be only partiallyexposed, for example, due to lithography misalignment. One or moreprotective liners may remain masked by masking layer 190, such that themasked fins remain active vertical fins 111.

FIG. 10 is a cross-sectional side view of a partially removed protectiveliner on a plurality of vertical fins, in accordance with the presentprinciples.

In one or more embodiments, after the protective liner 170 is exposed,at least a portion of the protective liner 170 between the vertical fin111 and the filler layer 180 may be selectively removed. In variousembodiments, a selective gaseous or wet etch may be used to selectivelyremove at least a portion of the protective liner 170 between thevertical fin 111 and the filler layer 180. The upper portion of theprotective liner 170 may be removed leaving a lower portion of theprotective liner remaining on the vertical fin 111. Portions of theprotective liner 170 may be removed from one or more vertical fin(s)111. In various embodiments, the fin template(s) 121 may be removed bythe same process used to remove the protective liner 170, where theprotective liner 170 and fin template(s) 121 are made of the samematerial.

In one or more embodiments, a silicon nitride (SiN) protective liner 170may be at least partially removed using a hot phosphoric acid wetetchant, where the phosphoric acid etchant selectively removes thesilicon nitride (SiN) protective liner 170 while leaving an oxide fillerlayer 180 and semiconductor vertical fin(s) 111.

In one or more embodiments, a silicon oxide (SiO) protective liner 170may be at least partially removed using a gaseous hydrogen fluoride (HF)etchant, where the gaseous hydrogen fluoride selectively removes thesilicon oxide (SiO) protective liner 170 while leaving a siliconoxynitride (SiON) or silicon boronitride (SiBN) filler layer 180 andsingle crystal silicon (c-Si) vertical fin(s) 111. If protective liner170 is a silicon oxide (SiO), a different material may be used forfiller layer 180, so the protective liner 170 may be selectively etchedwithout damaging the filler layer.

In one or more embodiments, the removal of a portion or the protectiveliner 170 may form a reaction channel 200 from the top surface of thefiller layer 180 along at least a portion of the side and/or end wallsof the vertical fin 111 to allow reactants to access the surfaces of thevertical fin 111 exposed in the reaction channel 200. The reactionchannel 200 may extend along the sidewalls and/or endwalls of a verticalfin 111, where the width of the reaction channel may be approximatelythe same as the thickness of the protective liner 170 formed on the oneor more vertical fin(s) 111. The width of the reaction channel 200 maybe sufficient to allow a gaseous or liquid reactant (e.g., etchant) toaccess the material of the vertical fin exposed at the top and along thereaction channel 200.

In various embodiments, removal of the protective liner 170 may befaster where a greater surface area of the protective liner 170 isexposed to an etchant, whereas removal of the protective liner 170 frombetween the vertical fin(s) 111 and the filler layer 180 may be slowerdue to limited diffusion of etchant and smaller exposed surface area ofthe protective liner 170 in a channel.

FIG. 11 is a cross-sectional side view of a reduced height filler layerexposing vertical fins covered or not covered with the protective liner,in accordance with the present principles.

In one or more embodiments, the masking layer 190 may be removed, aswould be known for a lithography mask, to expose the top surface of thefiller layer 180.

In one or more embodiments, a portion of the filler layer 180 may beremoved to reduce the height of the filler layer 180 on the verticalfin(s) 111, and protective liner.

FIG. 12 is a cross-sectional side view of a plurality of vertical finsconverted to inactive fins, in accordance with the present principles.

In one or more embodiments, the vertical fins no longer completelycovered by the protective liner 170 may be converted to a non-conductivematerial, where at least the exposed portions of the vertical fin 111may be converted to a non-conductive material.

In one or more embodiments, the portions of the vertical fin(s) 111 notcovered by the protective liner 170 may be reacted with a reactant toconvert the semiconductor material of the vertical fin(s) into aninsulating material. In various embodiments, the vertical fin(s) 111 maybe reacted with an oxidizing and/or nitride reactant, where theoxidizing and/or nitride reactant may be a gaseous oxidizing and/ornitride reactant. In various embodiments, the reactant may be a plasmareactant that can oxidize and/or nitride the semiconducting material ofthe vertical fin 111.

In one or more embodiments, the exposed portion of the vertical fin(s)111 may be thermally oxidized to form a silicon dioxide (SiO₂) inactivefin(s) 118, where the inactive fin(s) 118 may be adjacent to activefin(s) 111. In various embodiments, the vertical fin(s) 111 may be wetoxidized at a temperature of about 500° C. to oxidize a silicon verticalfin to silicon oxide.

In one or more embodiments, the exposed portion of the vertical fin(s)111 may be nitrided, for example, by exposure to ammonia (NH₃) to formsilicon nitride (e.g., Si₃N₄) inactive fin(s) 118, where the inactivefin(s) 118 may be adjacent to active fin(s) 111. The active verticalfin(s) 111 may be made of a semiconductor material, whereas at least aportion of the inactive vertical fin(s) may be made of an insulatingmaterial (e.g., oxide or nitride).

FIG. 13 is a cross-sectional side view of a gate dielectric layer formedon the active and inactive vertical fins, in accordance with the presentprinciples.

In one or more embodiments, remaining portion(s) of the protective liner170 may be removed from the vertical fin(s) 111 that have not beenconverted to inactive fin(s) 118, where the portion(s) of the protectiveliner 170 exposed above the surface of the filler layer 180 may beremoved. The portion(s) of the protective liner 170 may be removed by aselective etch, for example, a selective, isotropic wet or dry etch.Removal of the portion(s) of the protective liner 170 may expose theunderlying active vertical fin(s) 111 above the surface of the reducedheight filler layer 180. The protective liner 170 on the side(s) of aninactive fin 118 may be further recessed during removal of theprotective liner 170 from the one or more active vertical fin(s) 111.The protective liner 170 may be recessed more on the inactive fin(s) 118than the active vertical fin(s) 111, where this may be due to therepeated exposure of the protective liner 170 on the inactive fin(s) 118to an etchant compare to a single exposure of the protective liner 170on the active vertical fin(s) 111 to the etchant.

In a non-limiting exemplary embodiment, a silicon nitride (SiN)protective liner 170 may be removed by a hot phosphoric acid wet etch.

In one or more embodiments, a gate dielectric layer 210 may be formed onat least a portion of the exposed portions of the inactive fin(s) 118and/or the active vertical fin(s) 111. The gate dielectric layer 210 maybe part of a gate structure formed on one or more active vertical fin(s)111, where the gate structure may extend across one or more activevertical fin(s) 111 or inactive vertical fin(s) 118. A gate structuremay include a work function layer and/or a gate fill layer, where thegate fill layer and work function layer may form a conductive gateelectrode.

In one or more embodiments, the gate dielectric layer 210 may be aninsulating dielectric layer, for example, a silicon oxide (SiO) or ahigh-K dielectric.

In various embodiments, the dielectric layer 210 may be a high-Kdielectric material that may include, but is not limited to, transitionmetal oxides such as hafnium oxide (e.g., HfO₂), hafnium silicon oxide(e.g., HfSiO₄), hafnium silicon oxynitride (Hf_(w)Si_(x)O_(y)N_(z)),lanthanum oxide (e.g., La₂O₃), lanthanum aluminum oxide (e.g., LaAlO₃),zirconium oxide (e.g., ZrO₂), zirconium silicon oxide (e.g., ZrSiO₄),zirconium silicon oxynitride (Zr_(w)Si_(x)O_(y)N_(z)), tantalum oxide(e.g., TaO₂, Ta₂O₅), titanium oxide (e.g., TiO₂), barium strontiumtitanium oxide (e.g., BaTiO₃—SrTiO₃), barium titanium oxide (e.g.,BaTiO₃), strontium titanium oxide (e.g., SrTiO₃), yttrium oxide (e.g.,Y₂O₃), aluminum oxide (e.g., Al₂O₃), lead scandium tantalum oxide(Pb(Sc_(x)Ta_(1-x))O₃), and lead zinc niobate (e.g., PbZn_(1/3) Nb_(2/3)O₃). The high-k material may further include dopants such as lanthanumand/or aluminum. The stoichiometry of the high-K compounds may vary.

In one or more embodiments, the gate dielectric layer 210 may be formedby a conformal deposition, for example, ALD, PEALD, CVD, PECVD, orcombinations thereof.

FIG. 14 is a cross-sectional side view of a dummy gate layer formed onthe active and inactive vertical fins, in accordance with the presentprinciples.

In one or more embodiments, a dummy gate layer 220 may be formed on thegate dielectric layer 210, where the dummy gate layer 220 and the gatedielectric layer 210 may be different materials. In various embodiments,the dummy gate layer 220 may be an amorphous silicon (a-Si) blanketdeposited on at least a portion of the gate dielectric layer 210 andvertical fins 111, 118, where the dummy gate layer 220 may fill in thespaces between adjacent vertical fins.

FIG. 15 is a cross-sectional side view of patterned dummy gates andexposed inactive vertical fins, in accordance with the presentprinciples.

In one or more embodiments, a lithographic mask may be formed andpatterned on the dummy gate layer 220, where portions of the underlyingdummy gate layer 220 may be exposed through openings in the lithographicmask. The exposed portion(s) of the dummy gate layer 220 may be removedto form one or more dummy gate(s) 221, and expose at least a portion ofthe underlying gate dielectric layer 210. The one or more dummy gate(s)221 may be formed on one or more active vertical fin(s) 111 andsubsequently replaced by gate structures.

In one or more embodiments, portion(s) of the dummy gate layer 220 maybe removed by a directional dry plasma etch, for example, an RIE.

FIG. 16 is a cross-sectional side view of dummy gates and an interlayerdielectric formed on portions of the gate dielectric layer, inaccordance with the present principles.

In one or more embodiments, an interlayer dielectric (ILD) 240 may beformed on the exposed gate dielectric layer 210, where the interlayerdielectric 240 and the gate dielectric layer 210 may be differentmaterials. The interlayer dielectric 220 may extend above the topsurfaces of the active vertical fin(s) 111, inactive fin(s) 118, gatedielectric layer 210, and dummy gate(s) 221, where the interlayerdielectric 240 may cover the underlying active vertical fin(s) 111,inactive fin(s) 118, and gate dielectric layer 210. The interlayerdielectric 240 may fill the spaces between adjacent vertical fin(s) 111,inactive fin(s) 118, and/or dummy gates 221 to electrically isolatesubsequently formed gate structures. A chemical-mechanical polishing(CMP) may be used to reduce the height of the interlayer dielectric 240,and/or to provide a smooth, flat surface to the interlayer dielectric.

In one or more embodiments, the interlayer dielectric 240 may be asilicon oxide (SiO) or a low-k dielectric material. In variousembodiments, a low-k dielectric material may be a fluoride-doped siliconoxide (e.g., fluoride doped glass), a carbon-doped silicon oxide, aporous silicon oxide, a spin-on silicon based polymeric material (e.g.,tetraethyl orthosilicatehydrogen (TEOS), silsesquioxane (HSQ) andmethylsilsesquioxane (MSQ)), or combinations thereof.

In various embodiments, the interlayer dielectric 240 may be blanketdeposited on the active vertical fin(s) 111, inactive fin(s) 118, andgate dielectric layer 210. In various embodiments, the interlayerdielectric 220 may be formed by CVD, LPCVD, or spun on.

FIG. 17 is a cross-sectional side view of a work function layer and aninterlayer dielectric formed on portions of the gate dielectric layerafter removal of the dummy gates, in accordance with the presentprinciples.

In one or more embodiments, the dummy gate(s) 221 may be removed toexpose the underlying gate dielectric layer 210, where the dummy gate(s)221 may be removed by a selective etch, for example, a selective RIE.

In one or more embodiments, a work function layer 215 may be formed onthe gate dielectric layer 210 exposed by removal of the dummy gate(s)221. A work function layer 215 may be formed on the exposed portion(s)of the gate dielectric layer 210 between interlayer dielectric 240. Thework function layer 215 may be W-shaped and extend up the sidewalls ofthe interlayer dielectric 240. The work function layer 215 may be formedon the gate dielectric layer 210 to adjust the electrical properties ofthe gate electrode. In various embodiments, the work function layer 215may be optional.

In various embodiments, a work function layer 215 may be a conductivenitride, including but not limited to titanium nitride (TiN), titaniumaluminum nitride (TiAlN), hafnium nitride (HfN), hafnium silicon nitride(HfSiN), tantalum nitride (TaN), tantalum silicon nitride (TaSiN),tungsten nitride (WN), molybdenum nitride (MoN), niobium nitride (NbN);a conductive carbide, including but not limited to titanium carbide(TiC), titanium aluminum carbide (TiAlC), tantalum carbide (TaC),hafnium carbide (HfC); or combinations thereof. The work function layer215 may include multiple layers of work function materials, for example,a work function layer 215 may be a TiN/TiC stack.

In one or more embodiments, the work function layer 215 may be formed bya conformal deposition, for example, ALD, PEALD, CVD, PECVD, orcombinations thereof. The work function layer 215 may be formed by adirectional ion deposition, for example, PVD or a gas cluster ion beamdeposition (GCIB), where the work function layer 215 may be formed onthe exposed surfaces of the gate dielectric layer 210 on the activevertical fin(s) 111, but not deposited on the vertical sidewalls of theinterlayer dielectric 240. Portions of the work function layer 215 maybe removed from the sidewalls of the interlayer dielectric 240 by anon-directional etch. The work function layer 215 may be at leastpartially etched back.

In various embodiments, the work function layer 215 may have a thicknessin the range of about 3 nm to about 11 nm, or may have a thickness inthe range of about 5 nm to about 8 nm.

FIG. 18 is a cross-sectional side view of a work function layer and agate fill layer formed on portions of the gate dielectric layer, inaccordance with the present principles.

In one or more embodiments, a gate fill layer 250 may be formed on thegate dielectric layer 210 and/or work function layer 215 if present,where the gate fill layer 250 may fill in the space(s) betweeninterlayer dielectric 240. The gate fill layer 250, gate dielectriclayer 210, and optionally the work function layer 215, may form a gatestructure on one or more active vertical fin(s) 111, where the gate filllayer 250 and work function layer 215 may form a conductive gateelectrode.

In various embodiments, the gate fill layer 250 may be blanket depositedon the exposed surfaces of the gate dielectric layer 210 and/or workfunction layer 215 on the vertical fin(s) 111. The formed gate filllayer 250 may extend above the top surface of the interlayer dielectric240, where the gate fill layer material above the top surfaces of theinterlayer dielectric 240 may be removed by a CMP to provide a flat,uniform surface.

In various embodiments, the gate fill layer 250 may be a conductivemetal, where the metal may be tungsten (W), titanium (Ti), molybdenum(Mo), cobalt (Co), or a conductive carbon material (e.g., carbonnanotube, graphene, etc.), or any suitable combinations thereof.

The interlayer dielectric 240 may physically and electrically separatethe gate electrodes formed on the active vertical fin(s) 111.

FIG. 19 is a cross-sectional top view of an arrangement of adjacentactive vertical fins and inactive vertical fins having gate structuresthereon, in accordance with the present principles.

In one or more embodiments, a plurality of active vertical fins 111 maybe arranged on a substrate with one or more inactive vertical fin(s)118, wherein each of the one or more inactive vertical fin(s) 118 may beadjacent to at least one active vertical fin 111. The active verticalfins 111 may be made of a semiconductor material that may be the samematerial as the substrate 110. The inactive vertical fin(s) 118 may beat least partially made of an insulating material, for example, siliconoxide or silicon nitride, where a portion of the semiconductor materialof an active vertical fin has been converted to the insulating material.

In various embodiments, the plurality of active and inactive verticalfins may be arranged in a row, where the sidewalls (i.e., sides havingthe larger surface area) of the fins are facing adjacent fins. Aninactive vertical fin 118 or active vertical fin 111 may be at theperiphery of the arrangement, such that the active or inactive fin hasonly one adjacent vertical fin, which may be an active vertical fin 111or an inactive vertical fin 118. In a non-limiting exemplary embodiment,at least three vertical fins may be arranged adjacent to each other on asubstrate, where one of the three vertical fins may be an inactivevertical fin 118, and the remaining two vertical fins may be active(e.g., electrically conductive) vertical fins 111.

In one or more embodiments, the pitch between an inactive vertical fin118 and an active vertical fin 111 adjacent to the inactive vertical fin118 may be the same as the pitch between any other two adjacent verticalfins in an arrangement. The active and inactive vertical fins may be inthe same row, such that there is the same distance between each adjacentvertical fin in the row. In various embodiments, the pitch betweenadjacent vertical fins 111, 118 may be in the range of about 20 nm toabout 60 nm, or in the range of about 20 nm to about 40 nm, or in therange of about 25 nm to about 30 nm.

In one or more embodiments, gate fill layer 250 may extend across one ormore active vertical fin(s) 111, where the gate fill layer 250 may bepart of a gate structure on a central portion of the active verticalfin(s) 111. The size and position of the gate structure on the topsurface and sidewalls along the length of the vertical fin(s) 111 maydefine the position and size of a channel for the formation of a finfield effect transistor (finFET). Source/drains 260 may be formed onopposite ends of the active vertical fin(s) to fabricate a finFET havingcurrent flow laterally through the fin (i.e., parallel to the plane ofthe substrate). A finFET may have multiple source/drains and gatestructures coupled together to form a multi-fin FET, where asource/drain may extend across multiple adjacent vertical fins 111.

In various embodiments, source/drain(s) 260 may be formed by dopingopposite ends of the active vertical fin(s) 111, where the source/drainsare on opposite sides of the gate structure and channel of the finFET.In various embodiments, source/drain(s) may be formed by epitaxialgrowth of a compatible semiconductor material on opposite ends of theone or more active vertical fin(s) 111, where the source/drain(s) may bedoped in-situ (during epitaxial growth) or ex-situ, for example, throughion implantation. Additional processes may then be used to finishfabrication of the finFET, including formation of electrical contacts,as would be known in the art.

In various embodiments, the source/drain(s) may be doped in-situ, forexample, during epitaxial growth of an active semiconductor layer on acrystalline surface of the vertical fin(s) 111 and/or substrate 110, orex-situ, for example, through ion implantation or thermal diffusion ofdopants into the vertical fin(s) 111 and/or substrate. The dopant of thesource/drains may be activated by annealing. Other suitable dopingtechniques may also be used, including but not limited to, gas phasedoping, plasma doping, plasma immersion ion implantation, clusterdoping, infusion doping, liquid phase doping, solid phase doping, orcombinations thereof.

It will also be understood that when an element such as a layer, regionor substrate is referred to as being “on” or “over” another element, itcan be directly on the other element or intervening elements may also bepresent. In contrast, when an element is referred to as being “directlyon” or “directly over” another element, there are no interveningelements present. It will also be understood that when an element isreferred to as being “connected” or “coupled” to another element, it canbe directly connected or coupled to the other element or interveningelements may be present. In contrast, when an element is referred to asbeing “directly connected” or “directly coupled” to another element,there are no intervening elements present.

It should be understood that use of descriptions such as top, bottom,left, right, vertical, horizontal, or the like, are intended to be inreference to the orientation(s) illustrated in the figures, and areintended to be descriptive and to distinguish aspects of depictedfeatures without being limiting. Spatially relative terms, such as“beneath,” “below,” “lower,” “above,” “upper,” and the like, may be usedherein for ease of description to describe one element's or feature'srelationship to another element(s) or feature(s) as illustrated in theFIGs. It will be understood that the spatially relative terms areintended to encompass different orientations of the device in use oroperation in addition to the orientation depicted in the FIGs. Forexample, if the device in the FIGs. is turned over, elements describedas “below” or “beneath” other elements or features would then beoriented “above” the other elements or features. Thus, the term “below”can encompass both an orientation of above and below. The device may beotherwise oriented (rotated 90 degrees or at other orientations), andthe spatially relative descriptors used herein may be interpretedaccordingly. In addition, it will also be understood that when a layeris referred to as being “between” two layers, it can be the only layerbetween the two layers, or one or more intervening layers may also bepresent.

It will be understood that, although the terms first, second, etc. maybe used herein to describe various elements, these elements should notbe limited by these terms. These terms are only used to distinguish oneelement from another element. Reference to first, second, third, etc.,feature is intended to distinguish features without necessarily implyinga particular order unless otherwise so stated or indicated. Thus, afirst element discussed herein could be termed a second element withoutdeparting from the scope of the present concept.

The present embodiments may include a design for an integrated circuitchip, which may be created in a graphical computer programming language,and stored in a computer storage medium (such as a disk, tape, physicalhard drive, or virtual hard drive such as in a storage access network).If the designer does not fabricate chips or the photolithographic masksused to fabricate chips, the designer may transmit the resulting designby physical means (e.g., by providing a copy of the storage mediumstoring the design) or electronically (e.g., through the Internet) tosuch entities, directly or indirectly. The stored design is thenconverted into the appropriate format (e.g., GDSII) for the fabricationof photolithographic masks, which typically include multiple copies ofthe chip design in question that are to be formed on a wafer. Thephotolithographic masks are utilized to define areas of the wafer(and/or the layers thereon) to be etched or otherwise processed.

Methods as described herein may be used in the fabrication of integratedcircuit chips. The resulting integrated circuit chips can be distributedby the fabricator in raw wafer form (that is, as a single wafer that hasmultiple unpackaged chips), as a bare die, or in a packaged form. In thelatter case the chip is mounted in a single chip package (such as aplastic carrier, with leads that are affixed to a motherboard or otherhigher level carrier) or in a multichip package (such as a ceramiccarrier that has either or both surface interconnections or buriedinterconnections). In any case the chip is then integrated with otherchips, discrete circuit elements, and/or other signal processing devicesas part of either (a) an intermediate product, such as a motherboard, or(b) an end product. The end product can be any product that includesintegrated circuit chips, ranging from toys and other low-endapplications to advanced computer products having a display, a keyboardor other input device, and a central processor.

Reference in the specification to “one embodiment” or “an embodiment” ofthe present principles, as well as other variations thereof, means thata particular feature, structure, characteristic, and so forth describedin connection with the embodiment is included in at least one embodimentof the present principles. Thus, the appearances of the phrase “in oneembodiment” or “in an embodiment”, as well any other variations,appearing in various places throughout the specification are notnecessarily all referring to the same embodiment.

It is to be appreciated that the use of any of the following “/”,“and/or”, and “at least one of”, for example, in the cases of “A/B”, “Aand/or B” and “at least one of A and B”, is intended to encompass theselection of the first listed option (A) only, or the selection of thesecond listed option (B) only, or the selection of both options (A andB). As a further example, in the cases of “A, B, and/or C” and “at leastone of A, B, and C”, such phrasing is intended to encompass theselection of the first listed option (A) only, or the selection of thesecond listed option (B) only, or the selection of the third listedoption (C) only, or the selection of the first and the second listedoptions (A and B) only, or the selection of the first and third listedoptions (A and C) only, or the selection of the second and third listedoptions (B and C) only, or the selection of all three options (A and Band C). This may be extended, as readily apparent by one of ordinaryskill in this and related arts, for as many items listed.

Having described preferred embodiments of a system and method (which areintended to be illustrative and not limiting), it is noted thatmodifications and variations can be made by persons skilled in the artin light of the above teachings. It is therefore to be understood thatchanges may be made in the particular embodiments disclosed which arewithin the scope of the invention as outlined by the appended claims.Having thus described aspects of the invention, with the details andparticularity required by the patent laws, what is claimed and desiredprotected by Letters Patent is set forth in the appended claims.

What is claimed is:
 1. An arrangement of active and inactive fins on asubstrate, comprising: a plurality of active vertical fins, wherein theactive vertical fins are made of a semiconductor material; at least oneinactive vertical fin adjacent to at least one of the plurality ofactive vertical fins, wherein the at least one inactive vertical fin isat least partially made of an insulating material; and a dielectriclayer on at least a portion of the plurality of active vertical fins. 2.The arrangement of active and inactive fins of claim 1, wherein at leasttwo of the plurality of active vertical fins are adjacent to each other,and the pitch between the at least one inactive vertical fin and the atleast one of the plurality of active vertical fins adjacent to the atleast one inactive vertical fin is the same as the pitch between the twoadjacent active vertical fins.
 3. The arrangement of active and inactivefins of claim 1, further comprising a gate fill layer on at least aportion of the dielectric layer to form a gate structure on at least oneof the plurality of active vertical fins.
 4. The arrangement of activeand inactive fins of claim 3, further comprising a source/drain atopposite ends of the plurality of active vertical fins.
 5. Thearrangement of active and inactive fins of claim 1, further comprising aprotective liner on at least a portion of each of the plurality ofactive vertical fins and on at least a portion of the at least oneinactive vertical fin.
 6. The arrangement of active and inactive fins ofclaim 5, wherein the protective liner is silicon oxide (SiO), siliconnitride (SiN), silicon oxynitride (SiON), silicon boronitride (SiBN), orcombinations thereof.
 7. The arrangement of active and inactive fins ofclaim 6, wherein the protective liner is silicon nitride.
 8. Thearrangement of active and inactive fins of claim 1, wherein the at leastone inactive vertical fin is between two of the plurality of activevertical fins.
 9. The arrangement of active and inactive fins of claim8, wherein the at least one inactive vertical fin is partially made of asemiconductor oxide.
 10. An arrangement of active and inactive fins on asubstrate, comprising: a plurality of active vertical fins, wherein theactive vertical fins are made of a semiconductor material; at least oneinactive vertical fin adjacent to at least one of the plurality ofactive vertical fins, wherein the at least one inactive vertical fin isat least partially made of a semiconductor oxide; and a protective lineron at least a portion of each of the plurality of active vertical finsand on at least a portion of the at least one inactive vertical fin. 11.The arrangement of active and inactive fins of claim 10, wherein theprotective liner is silicon oxide (SiO), silicon nitride (SiN), siliconoxynitride (SiON), silicon boronitride (SiBN), or combinations thereof.12. The arrangement of active and inactive fins of claim 10, furthercomprising, a filler layer that fills at least a portion of the spacesbetween neighboring active and inactive fins.
 13. The arrangement ofactive and inactive fins of claim 12, further comprising a dielectriclayer on at least a portion of the plurality of active vertical fins andon the filler layer between neighboring active and inactive fins. 14.The arrangement of active and inactive fins of claim 12, wherein thepitch between neighboring active and inactive fins is in the range ofabout 20 nm to about 60 nm.
 15. The arrangement of active and inactivefins of claim 12, wherein the dielectric layer is silicon oxide (SiO) ora high-K dielectric.
 16. An arrangement of active and inactive fins on asubstrate, comprising: a plurality of active vertical fins, wherein theactive vertical fins are made of a semiconductor material; at least oneinactive vertical fin adjacent to at least one of the plurality ofactive vertical fins, wherein the at least one inactive vertical fin isat least partially made of a semiconductor oxide; a filler layer thatfills at least a portion of the spaces between neighboring active andinactive fins; a dielectric layer on at least a portion of the pluralityof active vertical fins and on the filler layer between neighboringactive and inactive fins; and a protective liner on at least a portionof each of the plurality of active vertical fins and on at least aportion of the at least one inactive vertical fin.
 17. The arrangementof active and inactive fins of claim 16, further comprising, a workfunction layer on at least a portion of the dielectric layer.
 18. Thearrangement of active and inactive fins of claim 17, further comprising,a gate fill layer on at least a portion of the work function layer toform a gate structure on at least one of the plurality of activevertical fins.
 19. The arrangement of active and inactive fins of claim18, wherein the at least one inactive vertical fin is partially made ofa semiconductor oxide.
 20. The arrangement of active and inactive finsof claim 18, wherein the pitch between neighboring active and inactivefins is in the range of about 20 nm to about 60 nm.